中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Formation of GaN nanorods by a sublimation method

文献类型:期刊论文

作者Li, JY ; Chen, XL ; Qiao, ZY ; Cao, YG ; Lan, YC
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2000
卷号213期号:3-4页码:408
关键词NITRIDE NANOWIRES CARBON FILMS
ISSN号0022-0248
通讯作者Li, JY: Chinese Acad Sci, Inst Phys, POB 603-33, Beijing 100080, Peoples R China.
中文摘要Oxide thin films have been studied for frequency and phase agile electronics. The electric-field tuning of microwave devices employs ferroelectrics, while the Magnetic-field tuning uses ferrites. The critical material parameters for ferroelectric thin films are the tunability of the dielectric constant and the dielectric loss. This paper describes the current understanding of the fundamental mechanisms of these properties and the research efforts to improve them in ferroelectric thin films.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/38399]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Li, JY,Chen, XL,Qiao, ZY,et al. Formation of GaN nanorods by a sublimation method[J]. JOURNAL OF CRYSTAL GROWTH,2000,213(3-4):408.
APA Li, JY,Chen, XL,Qiao, ZY,Cao, YG,&Lan, YC.(2000).Formation of GaN nanorods by a sublimation method.JOURNAL OF CRYSTAL GROWTH,213(3-4),408.
MLA Li, JY,et al."Formation of GaN nanorods by a sublimation method".JOURNAL OF CRYSTAL GROWTH 213.3-4(2000):408.

入库方式: OAI收割

来源:物理研究所

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