Formation of interfacial layers in LaAlO3/silicon during film deposition
文献类型：期刊论文
| 作者 | Xiang, WF ; Lu, HB ; Yan, L ; He, M ; Zhou, YL ; Chen, ZH |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2006 |
| 卷号 | 23期号:2页码:467 |
| 关键词 | AMORPHOUS LAALO3 THIN-FILMS OXIDATION SILICON SI(100) |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, ZH: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China. |
| 中文摘要 | We have studied the interfacial reactions between amorphous LaAlO3 thin films and Si substrates, using high-resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interfacial layer between LaAlO3 him and Si substrate is SiLaxAlyOx. The depth distributions of La, Si and Al chemical states show that the ratio of La 4d(3/2) to Al 2p of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content in the interfacial layer gradually decreases with increasing thickness of the interfacial layer. These results strongly suggest that the Al element is not deficient in the interfacial layer, as previously believed, and the formation of a SiLaxAlyOz interfacial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interfacial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-h oxides as gate dielectrics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38402]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xiang, WF,Lu, HB,Yan, L,et al. Formation of interfacial layers in LaAlO3/silicon during film deposition[J]. CHINESE PHYSICS LETTERS,2006,23(2):467. |
| APA | Xiang, WF,Lu, HB,Yan, L,He, M,Zhou, YL,&Chen, ZH.(2006).Formation of interfacial layers in LaAlO3/silicon during film deposition.CHINESE PHYSICS LETTERS,23(2),467. |
| MLA | Xiang, WF,et al."Formation of interfacial layers in LaAlO3/silicon during film deposition".CHINESE PHYSICS LETTERS 23.2(2006):467. |
入库方式： OAI收割
来源：物理研究所
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