Formation of ordered Ge quantum dots on the Si(111)-(7X7) surface
文献类型：期刊论文
| 作者 | Zhang, YP ; Yan, L ; Xie, SS ; Pang, SJ ; Gao, HJ |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 79期号:20页码:3317 |
| 关键词 | SELF-ORGANIZED GROWTH SCANNING-TUNNELING-MICROSCOPY |
| ISSN号 | 0003-6951 |
| 通讯作者 | Zhang, YP: Chinese Acad Sci, Inst Phys, Beijing Lab Vacuum Phys, POB 2724, Beijing 100080, Peoples R China. |
| 中文摘要 | We present a pathway for the formation of ordered Ge quantum dots on Si(111)-(7x7) substrate. Self-assembled growth of Ge quantum dots on the Si(111)-(7x7) surface has been investigated using scanning tunneling microscopy. The Ge is grown on the substrate by solid phase epitaxy at room temperature. It has been found that the deposited submonolayer Ge can aggregate and form ordered Ge quantum dots on the surface through controlling the annealing temperature. The formation of ordered Ge quantum dots is due to the preferential adsorption sites of Ge on Si(111)-(7x7). The formed Ge quantum dots may have a great potential in the application of nanodevices. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38417]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, YP,Yan, L,Xie, SS,et al. Formation of ordered Ge quantum dots on the Si(111)-(7X7) surface[J]. APPLIED PHYSICS LETTERS,2001,79(20):3317. |
| APA | Zhang, YP,Yan, L,Xie, SS,Pang, SJ,&Gao, HJ.(2001).Formation of ordered Ge quantum dots on the Si(111)-(7X7) surface.APPLIED PHYSICS LETTERS,79(20),3317. |
| MLA | Zhang, YP,et al."Formation of ordered Ge quantum dots on the Si(111)-(7X7) surface".APPLIED PHYSICS LETTERS 79.20(2001):3317. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。