Fractional Chern Insulators in Topological Flat Bands with Higher Chern Number
文献类型：期刊论文
| 作者 | Liu, Z ; Bergholtz, EJ ; Fan, H ; Lauchli, AM |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2012 |
| 卷号 | 109期号:18 |
| 关键词 | HALL STATES STATISTICS |
| ISSN号 | 0031-9007 |
| 通讯作者 | Bergholtz, EJ: Free Univ Berlin, Dahlem Ctr Complex Quantum Syst, Arnimallee 14, D-14195 Berlin, Germany. |
| 中文摘要 | Lattice models forming bands with higher Chern number offer an intriguing possibility for new phases of matter with no analogue in continuum Landau levels. Here, we establish the existence of a number of new bulk insulating states at fractional filling in flat bands with a Chern number C = N > 1, forming in a recently proposed pyrochlore model with strong spin-orbit coupling. In particular, we find compelling evidence for a series of stable states at v = 1/(2N + 1) for fermions as well as bosonic states at v = 1/(N + 1). By examining the topological ground state degeneracies and the excitation structure as well as the entanglement spectrum, we conclude that these states are Abelian. We also explicitly demonstrate that these states are nevertheless qualitatively different from conventional quantum Hall (multilayer) states due to the novel properties of the underlying band structure. |
| 收录类别 | SCI |
| 资助信息 | Alexander von Humboldt foundation; "973" program [2010CB922904] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38463]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Liu, Z,Bergholtz, EJ,Fan, H,et al. Fractional Chern Insulators in Topological Flat Bands with Higher Chern Number[J]. PHYSICAL REVIEW LETTERS,2012,109(18). |
| APA | Liu, Z,Bergholtz, EJ,Fan, H,&Lauchli, AM.(2012).Fractional Chern Insulators in Topological Flat Bands with Higher Chern Number.PHYSICAL REVIEW LETTERS,109(18). |
| MLA | Liu, Z,et al."Fractional Chern Insulators in Topological Flat Bands with Higher Chern Number".PHYSICAL REVIEW LETTERS 109.18(2012). |
入库方式： OAI收割
来源：物理研究所
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