GaAs nanostructuring by self-organized stencil mask ion lithography
文献类型：期刊论文
| 作者 | Zhang, ZQ ; Chiappe, D ; Toma, A ; Boragno, C ; Guo, JD ; Wang, EG ; de Mongeot, FB |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2011 |
| 卷号 | 110期号:11 |
| 关键词 | SURFACE-DIFFUSION MORPHOLOGY EVOLUTION FILMS |
| ISSN号 | 0021-8979 |
| 通讯作者 | de Mongeot, FB: Univ Genoa, Dipartimento Fis, Via Dodecaneso 33, I-16146 Genoa, Italy. |
| 中文摘要 | We report on nanoscale patterning of GaAs (100) semiconductor substrates employing an ion projection through a self-organized stencil mask. The nanostructured mask, formed by ion beam sputtering of a polycrystalline Au film, allows driving the GaAs morphology strongly out of equilibrium. In a second stage, after the stencil mask is removed, we quantitatively follow the dynamical evolution of the forced system toward equilibrium by analyzing the evolution of the power spectral density of the height profiles and their slope and curvature distribution. Strong differences are observed by comparing the relaxation dynamics of GaAs surfaces which tend to smoothen with that of glass, a material which instead tends to non-linearly amplify the pattern once driven out of equilibrium by the stencil mask. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665693] |
| 收录类别 | SCI |
| 资助信息 | MOST; NSF of China; MIUR [2008J858Y7]; CNISM; MAE; Fondazione CARIGE; ENEA under MSE |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38526]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, ZQ,Chiappe, D,Toma, A,et al. GaAs nanostructuring by self-organized stencil mask ion lithography[J]. JOURNAL OF APPLIED PHYSICS,2011,110(11). |
| APA | Zhang, ZQ.,Chiappe, D.,Toma, A.,Boragno, C.,Guo, JD.,...&de Mongeot, FB.(2011).GaAs nanostructuring by self-organized stencil mask ion lithography.JOURNAL OF APPLIED PHYSICS,110(11). |
| MLA | Zhang, ZQ,et al."GaAs nanostructuring by self-organized stencil mask ion lithography".JOURNAL OF APPLIED PHYSICS 110.11(2011). |
入库方式： OAI收割
来源：物理研究所
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