GaN-filled carbon nanotubes: synthesis and photoluminescence
文献类型：期刊论文
| 作者 | Zhi, CY ; Zhong, DY ; Wang, EG |
| 刊名 | CHEMICAL PHYSICS LETTERS
 |
| 出版日期 | 2003 |
| 卷号 | 381期号:5-6页码:715 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION FIELD-EMISSION PHASE EPITAXY NANOBELLS NANOWIRES GROWTH FILMS MECHANISM ARRAY |
| ISSN号 | 0009-2614 |
| 通讯作者 | Wang, EG: Chinese Acad Sci, State Key Lab Surface Phys, POB 603-20, Beijing 100080, Peoples R China. |
| 中文摘要 | Employing a GaAs substrate, GaN nanowires encapsulated in carbon nanotubes are synthesized by microwave-plasma-enhanced chemical vapor deposition. Almost 100% of the carbon nanotubes are filled with GaN. Both high-resolution transmission electron microscopy and selected area electron diffraction pattern reveal high crystallization in the GaN nanowires. The formation mechanism of the GaN-core/C-shell structure is discussed, emphasizing chemistry's influence on the structure produced, particularly the role of Ga from the substrate. Photoluminescence measurements reveal an ultraviolet band located at 3.35 eV and a yellow band located at 2.20 eV. The redshift of the ultraviolet band is attributed to N vacancies that result from the Ga-rich conditions of growth. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38565]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhi, CY,Zhong, DY,Wang, EG. GaN-filled carbon nanotubes: synthesis and photoluminescence[J]. CHEMICAL PHYSICS LETTERS,2003,381(5-6):715. |
| APA | Zhi, CY,Zhong, DY,&Wang, EG.(2003).GaN-filled carbon nanotubes: synthesis and photoluminescence.CHEMICAL PHYSICS LETTERS,381(5-6),715. |
| MLA | Zhi, CY,et al."GaN-filled carbon nanotubes: synthesis and photoluminescence".CHEMICAL PHYSICS LETTERS 381.5-6(2003):715. |
入库方式： OAI收割
来源：物理研究所
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