Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation
文献类型：期刊论文
| 作者 | Sheng, SR ; Liao, XB ; Kong, GL |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:17页码:2509 |
| 关键词 | CONSTANT PHOTOCURRENT METHOD A-SI-H ABSORPTION FILMS SPECTROSCOPY DEPOSITION STABILITY DILUTION |
| ISSN号 | 0003-6951 |
| 通讯作者 | Sheng, SR: Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada. |
| 中文摘要 | The effects of hydrogen dilution, subtle boron compensation, and light-soaking on the gap states of hydrogenated amorphous silicon films (a-Si:H) near and above the threshold of microcrystallinity have been investigated in detail by the constant photocurrent method and the improved phase-shift analysis of modulated photocurrent technique. It is shown that high hydrogen dilution near the threshold of microcrystallinity leads to a more ordered network structure and to the redistribution of gap states; it gives rise to a small peak at about 0.55 eV and a shoulder at about 1.2 eV below the conduction band edge, which are associated with the formation of microcrystallites embedded in the amorphous silicon host matrix. A concurrent subtle boron compensation is demonstrated to prevent excessive formation of microcrystallinity, and to help promote the growth of the ordered regions and reduce the density of gap defect states, particularly those associated with microcrystallites. Hydrogen-diluted and appropriately boron-compensated a-Si:H films deposited near the threshold of microcrystallinity show the lowest density of the defects in both the annealed and light-soaked states, and hence, the highest performance and stability. (C) 2001 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38576]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Sheng, SR,Liao, XB,Kong, GL. Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation[J]. APPLIED PHYSICS LETTERS,2001,78(17):2509. |
| APA | Sheng, SR,Liao, XB,&Kong, GL.(2001).Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation.APPLIED PHYSICS LETTERS,78(17),2509. |
| MLA | Sheng, SR,et al."Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation".APPLIED PHYSICS LETTERS 78.17(2001):2509. |
入库方式： OAI收割
来源：物理研究所
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