Gas pressure dependence of composition in Ta-Ti-N films prepared by pulsed high energy density plasma
文献类型：期刊论文
| 作者 | Feng, WR ; Zhou, H ; Yang, SZ |
| 刊名 | MATERIALS CHEMISTRY AND PHYSICS
 |
| 出版日期 | 2010 |
| 卷号 | 124期号:1页码:287 |
| 关键词 | RAY PHOTOELECTRON-SPECTROSCOPY TITANIUM CARBONITRIDE FILMS BORON-NITRIDE FILMS ROOM-TEMPERATURE DIFFUSION BARRIER THIN-FILMS DEPOSITION MICROSTRUCTURE TANTALUM COATINGS |
| ISSN号 | 0254-0584 |
| 通讯作者 | Feng, WR: Beijing Inst Petrochem Technol, Dept Mat Sci & Engn, 19 Qingyuan N Rd, Beijing 102617, Peoples R China. |
| 中文摘要 | Tantalum titanium nitride (Ta-Ti-N) films were deposited on silicon wafer substrates by pulsed high energy density plasma (PHEDP), under different intake gas pressures, ranging from 0.1 to 0.4 MPa. The films were investigated by X-ray photoelectron spectroscopy. Results were analyzed in detail, which reveals that the contents of the metallic elements (Ta and Ti) tend to decrease with pressure, while that of nitrogen increases as expected. With increasing pressure, the films can be denoted as TaTi(3.9)N(2.8), TaTi(4.7)N(6.0), TaTi(2.2)N(8.4) and TaTi(3.1)N1(3.5), respectively. The bonding state of tantalum, titanium, as well as nitrogen was fitted and discussed. Our results demonstrate that almost all the titanium bonded with nitrogen. The Ta-N and Ti-N bonds have equal shares under low gas intake pressure, while the Ti-N bonds prevail under high pressure. The preferential sputtering between the coaxial electrodes should be responsible for this phenomenon. Under low nitrogen pressure, the preferential sputtering is quite significant; while it could be neglected under high pressure. (C) 2010 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38581]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Feng, WR,Zhou, H,Yang, SZ. Gas pressure dependence of composition in Ta-Ti-N films prepared by pulsed high energy density plasma[J]. MATERIALS CHEMISTRY AND PHYSICS,2010,124(1):287. |
| APA | Feng, WR,Zhou, H,&Yang, SZ.(2010).Gas pressure dependence of composition in Ta-Ti-N films prepared by pulsed high energy density plasma.MATERIALS CHEMISTRY AND PHYSICS,124(1),287. |
| MLA | Feng, WR,et al."Gas pressure dependence of composition in Ta-Ti-N films prepared by pulsed high energy density plasma".MATERIALS CHEMISTRY AND PHYSICS 124.1(2010):287. |
入库方式： OAI收割
来源：物理研究所
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