Gas-assisted etching of niobium with focused ion beam
文献类型：期刊论文
| 作者 | Fu, XL ; Li, PG ; Jin, AZ ; Chen, LM ; Yang, HF ; Li, LH ; Tang, WH ; Cui, Z |
| 刊名 | MICROELECTRONIC ENGINEERING
 |
| 出版日期 | 2005 |
| 卷号 | 78-79页码:29 |
| ISSN号 | 0167-9317 |
| 通讯作者 | Cui, Z: Rutherford Appleton Lab, Didcot OX11 0QX, Oxon, England. |
| 中文摘要 | Gas-assisted etching (GAE) of niobium, with focused ion beam (FIB) has been investigated systematically in 12 and XeF2 gas atmosphere. The etching parameters which have been examined are ion beam current, beam dwelling time, beam overlap and gas species. It has been found that the beam overlap has no effect on the FIB etching of niobium, but significant effect when GAE is introduced. While the etching rate increases in general with ion beam current, the GAE effect is stronger with a smaller ion beam current. The shorter the dwelling time, the greater the GAE rate compared to FIB etching without GAE. (c) 2005 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38582]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Fu, XL,Li, PG,Jin, AZ,et al. Gas-assisted etching of niobium with focused ion beam[J]. MICROELECTRONIC ENGINEERING,2005,78-79:29. |
| APA | Fu, XL.,Li, PG.,Jin, AZ.,Chen, LM.,Yang, HF.,...&Cui, Z.(2005).Gas-assisted etching of niobium with focused ion beam.MICROELECTRONIC ENGINEERING,78-79,29. |
| MLA | Fu, XL,et al."Gas-assisted etching of niobium with focused ion beam".MICROELECTRONIC ENGINEERING 78-79(2005):29. |
入库方式： OAI收割
来源：物理研究所
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