Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3
文献类型：期刊论文
| 作者 | Chen, J ; Qin, HJ ; Yang, F ; Liu, J ; Guan, T ; Qu, FM ; Zhang, GH ; Shi, JR ; Xie, XC ; Yang, CL ; Wu, KH ; Li, YQ ; Lu, L |
| 刊名 | PHYSICAL REVIEW LETTERS
 |
| 出版日期 | 2010 |
| 卷号 | 105期号:17 |
| 关键词 | 3-DIMENSIONAL TOPOLOGICAL INSULATOR SINGLE DIRAC CONE SURFACE BI2TE3 FILMS |
| ISSN号 | 0031-9007 |
| 通讯作者 | Chen, J: Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We report that Bi2Se3 thin films can be epitaxially grown on SrTiO3 substrates, which allow for very large tunablity in carrier density with a back gate. The observed low field magnetoconductivity due to weak antilocalization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest a much suppressed bulk conductivity at large negative gate voltages and a possible role of surface states in the WAL phenomena. |
| 收录类别 | SCI |
| 资助信息 | Ministry of Science & Technology of China; NSF-China; Chinese Academy of Sciences |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38587]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, J,Qin, HJ,Yang, F,et al. Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3[J]. PHYSICAL REVIEW LETTERS,2010,105(17). |
| APA | Chen, J.,Qin, HJ.,Yang, F.,Liu, J.,Guan, T.,...&Lu, L.(2010).Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3.PHYSICAL REVIEW LETTERS,105(17). |
| MLA | Chen, J,et al."Gate-Voltage Control of Chemical Potential and Weak Antilocalization in Bi2Se3".PHYSICAL REVIEW LETTERS 105.17(2010). |
入库方式： OAI收割
来源：物理研究所
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