Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix
文献类型：期刊论文
| 作者 | Wang, YQ ; Kong, GL ; Chen, WD ; Diao, HW ; Chen, CY ; Zhang, SB ; Liao, XB |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2002 |
| 卷号 | 81期号:22页码:4174 |
| ISSN号 | 0003-6951 |
| 关键词 | VISIBLE-LIGHT EMISSION POROUS SILICON QUANTUM CONFINEMENT SUPERLATTICES LUMINESCENCE FABRICATION RECRYSTALLIZATION |
| 通讯作者 | Wang, YQ: Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | Silicon nanocrystals in SiO2 matrix are fabricated by plasma enhanced chemical vapor deposition followed by thermal annealing. The structure and photoluminescence (PL) of the resulting films is investigated as a function of deposition temperature. Drastic improvement of PL efficiency up to 12% is achieved when the deposition temperature is reduced from 250 degreesC to room temperature. Low-temperature deposition is found to result in a high quality final structure of the films in which the silicon nanocrystals are nearly strain-free, and the Si/SiO2 interface sharp. The demonstration of the superior structural and optical properties of the films represents an important step towards the development of silicon-based light emitters. (C) 2002 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38707]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, YQ,Kong, GL,Chen, WD,et al. Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix[J]. APPLIED PHYSICS LETTERS,2002,81(22):4174. |
| APA | Wang, YQ.,Kong, GL.,Chen, WD.,Diao, HW.,Chen, CY.,...&Liao, XB.(2002).Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix.APPLIED PHYSICS LETTERS,81(22),4174. |
| MLA | Wang, YQ,et al."Getting high-efficiency photoluminescence from Si nanocrystals in SiO2 matrix".APPLIED PHYSICS LETTERS 81.22(2002):4174. |
入库方式： OAI收割
来源：物理研究所
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