中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films

文献类型:期刊论文

作者Lu, C ; Tian, SB ; Gu, CZ ; Li, JJ
刊名DIAMOND AND RELATED MATERIALS
出版日期2011
卷号20期号:2页码:217
关键词NANOCRYSTALLINE DIAMOND THIN-FILMS RAMAN
ISSN号0925-9635
通讯作者Li, JJ: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要Microcrystalline boron-doped diamond (BDD) films were prepared on silicon substrates by hot-filament chemical vapor deposition method. Different grain sizes of the boron-doped diamond films with nearly the same boron concentration were obtained by changing the nuclei concentration on the silicon substrates. The electrical transport behaviors of as-prepared boron-doped diamond films were measured, and the results revealed that with the increase of the grain sizes on the BDD films, the superconducting transition temperature was evidently increased. This phenomenon indicates that the superconducting transition of microcrystalline BDD films is influenced by the inhomogeneity aroused by the grain boundary effect. Our results could expand our understanding of the superconducting mechanism of microcrystalline BDD films, and are also significant to conventional applications of BDD materials. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/38798]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Lu, C,Tian, SB,Gu, CZ,et al. Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films[J]. DIAMOND AND RELATED MATERIALS,2011,20(2):217.
APA Lu, C,Tian, SB,Gu, CZ,&Li, JJ.(2011).Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films.DIAMOND AND RELATED MATERIALS,20(2),217.
MLA Lu, C,et al."Grain boundary effect on the superconducting transition of microcrystalline boron-doped diamond films".DIAMOND AND RELATED MATERIALS 20.2(2011):217.

入库方式: OAI收割

来源:物理研究所

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