Grain boundary resistivities of polycrystalline Au films
文献类型：期刊论文
| 作者 | Zhang, X ; Song, XH ; Zhang, XG ; Zhang, DL |
| 刊名 | EPL
 |
| 出版日期 | 2011 |
| 卷号 | 96期号:1 |
| 关键词 | GOLD-FILMS ELECTRICAL-RESISTIVITY CONDUCTIVITY TEMPERATURE RESISTANCE METALS SIZE |
| ISSN号 | 0295-5075 |
| 通讯作者 | Zhang, X: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Ni Schottky contacts on AlGaN/GaN heterostructures were fabricated. Some samples were thermally treated in a furnace with N(2) ambience at 600 degrees C for different times (0.5 h, 4.5 h, 10.5 h, 18 h, 33 h, 48 h, and 72 h), the others were thermally treated for 0.5 h at different temperatures (500 degrees C, 600 degrees C, 700 degrees C, and 800 degrees C). With the measured current-voltage (I-V) and capacitance-voltage (C-V) curves and by self-consistently solving Schrodinger's and Poisson's equations, we found that the relative permittivity of the AlGaN barrier layer was related to the piezoelectric and the spontaneous polarization of the AlGaN barrier layer. The relative permittivity was in proportion to the strain of the AlGaN barrier layer. The relative permittivity and the strain reduced with the increased thermal stress time until the AlGaN barrier totally relaxed (after 18 h at 600 degrees C in the current study), and then the relative permittivity was almost a constant with the increased thermal stress time. When the sample was treated at 800 degrees C for 0.5 h, the relative permittivity was less than the constant due to the huge diffusion of the contact metal atoms. Considering the relation between the relative permittivity of the AlGaN barrier layer and the converse piezoelectric effect, the conclusion can be made that a moderate thermal stress can restrain the converse piezoelectric effect and can improve the stability of AlGaN/GaN heterostructure devices. |
| 收录类别 | SCI |
| 资助信息 | National Basic Research Program of China [2006CB921304]; ORNL by Division of Scientific User Facilities, US DOE |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38799]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, X,Song, XH,Zhang, XG,et al. Grain boundary resistivities of polycrystalline Au films[J]. EPL,2011,96(1). |
| APA | Zhang, X,Song, XH,Zhang, XG,&Zhang, DL.(2011).Grain boundary resistivities of polycrystalline Au films.EPL,96(1). |
| MLA | Zhang, X,et al."Grain boundary resistivities of polycrystalline Au films".EPL 96.1(2011). |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。