Growth and Characteristics of Yb-doped Y3Ga5O12 Laser Crystal
文献类型：期刊论文
| 作者 | Yu, HH ; Wu, K ; Yao, B ; Zhang, HJ ; Wang, ZP ; Wang, JY ; Zhang, YD ; Wei, ZY ; Zhang, ZG ; Zhang, XY ; Jiang, MH |
| 刊名 | IEEE JOURNAL OF QUANTUM ELECTRONICS
 |
| 出版日期 | 2010 |
| 卷号 | 46期号:12页码:1689 |
| 关键词 | GARNET STRUCTURE SINGLE-CRYSTALS GALLIUM GARNETS DIODE LUMINESCENCE ABSORPTION SPECTRA YGG YAG |
| ISSN号 | 0018-9197 |
| 通讯作者 | Yu, HH: Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China. |
| 中文摘要 | Ytterbium (Yb) doped rare-earth garnet Y3Ga5O12 (YGG) single crystal was grown by the optical floating zone method for the first time, to our knowledge. Its structure and cell parameter were determined by X-ray powder diffraction. The thermal properties of Yb: YGG, including specific heat, thermal expansion coefficient, thermal diffusion coefficient, and thermal conductivity, were investigated. The optical properties of the crystal were also studied and the effective gain cross sections were calculated. With the crystal cut along the < 111 > direction, laser performance was also demonstrated by using a laser diode as the pump source. All the results show that Yb: YGG can be an excellent laser medium for applications to tunable and ultrafast pulsed lasers. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50672050, 50721002]; Grant for State Key Program of China [2010CB630702]; Innovation Fund for the Post-Doctoral Program of Shandong Province [200802029] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38869]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, HH,Wu, K,Yao, B,et al. Growth and Characteristics of Yb-doped Y3Ga5O12 Laser Crystal[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS,2010,46(12):1689. |
| APA | Yu, HH.,Wu, K.,Yao, B.,Zhang, HJ.,Wang, ZP.,...&Jiang, MH.(2010).Growth and Characteristics of Yb-doped Y3Ga5O12 Laser Crystal.IEEE JOURNAL OF QUANTUM ELECTRONICS,46(12),1689. |
| MLA | Yu, HH,et al."Growth and Characteristics of Yb-doped Y3Ga5O12 Laser Crystal".IEEE JOURNAL OF QUANTUM ELECTRONICS 46.12(2010):1689. |
入库方式： OAI收割
来源：物理研究所
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