Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Mei, F ; Fu, QM ; Peng, T ; Liu, C ; Peng, MZ ; Zhou, JM |
| 刊名 | JOURNAL OF APPLIED PHYSICS
 |
| 出版日期 | 2008 |
| 卷号 | 103期号:9 |
| 关键词 | FE-DOPED GAN GAN/SAPPHIRE INTERFACE (-/0)-ACCEPTOR LEVEL HEMT STRUCTURES SAPPHIRE LAYER DISLOCATION ENHANCEMENT SUBSTRATE TRANSPORT |
| ISSN号 | 0021-8979 |
| 通讯作者 | Liu, C: Wuhan Univ, Key Lab Acoust & Photon Mat & Dev, Minist Educ, Wuhan 430072, Peoples R China. |
| 中文摘要 | Al(0.30)Ga(0.70)N/GaN heterostructures grown on sapphire substrates by rf-plasma-assisted molecular beam epitaxy are investigated. The heterostructures consist of a 20 nm Al(0.30)Ga(0.70)N barrier layer deposited on a 2 mu m semi-insulating GaN epilayer. Room-temperature mobilities averaging 1350 cm(2)/V s and a sheet charge density of 1.1x10(13) cm(-2) are consistently achieved. Central to our approach is the iron-doped semi-insulating GaN epilayer and a pulsed N/Ga atomic deposition technique which makes it possible to simultaneously reduce threading dislocations and achieve a smooth surface. The heterostructures were examined by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Structural characterizations reveal a smooth surface morphology, coherent and sharp interfaces, and a low density of the threading dislocations. (C) 2008 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38876]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Mei, F,Fu, QM,Peng, T,et al. Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy[J]. JOURNAL OF APPLIED PHYSICS,2008,103(9). |
| APA | Mei, F,Fu, QM,Peng, T,Liu, C,Peng, MZ,&Zhou, JM.(2008).Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy.JOURNAL OF APPLIED PHYSICS,103(9). |
| MLA | Mei, F,et al."Growth and characterization of AlGaN/GaN heterostructures on semi-insulating GaN epilayers by molecular beam epitaxy".JOURNAL OF APPLIED PHYSICS 103.9(2008). |
入库方式： OAI收割
来源：物理研究所
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