Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures
文献类型:期刊论文
作者 | Wang, JX ; Xie, SS ; Gao, Y ; Yan, XQ ; Liu, DF ; Yuan, HJ ; Zhou, ZP ; Song, L ; Liu, LF ; Zhou, WY ; Wang, G |
刊名 | JOURNAL OF CRYSTAL GROWTH
![]() |
出版日期 | 2004 |
卷号 | 267期号:1-2页码:177 |
关键词 | STANNATE THIN-FILMS SENSING CHARACTERISTICS NANOWIRES TRANSPARENT FABRICATION NANOTUBES OXIDES SEMICONDUCTOR NANORIBBONS LITHOGRAPHY |
ISSN号 | 0022-0248 |
通讯作者 | Xie, SS: Chinese Acad Sci, Ctr Condensed Matter Phys, Adv Mat Inst Phys, Grp A05, Beijing 100080, Peoples R China. |
中文摘要 | Transparent semiconductor Zn2SnO4 nanowires were synthesized for the first time by the thermal evaporation method. The nanowires show a unique periodic structure along the axis of the nanowire. By varying the Zn ratio in the reactants, ZTO nanowires with different morphologies can be achieved. High-resolution transmission microscopy (HRTEM) characterization confirms that the ZTO nanowires are crystalline. PL (photoluminescence) measurement of the ZTO nanowires reveals a green emission band centered at similar to493 nm. Our method provides a simple approach for assembling nanocrystals into one-dimensional periodic nanostructures. These nanostructures may have potential applications for opto-electronic nanodevices and nanosystems. (C) 2004 Elsevier B.V. All rights reserved. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/38877] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Wang, JX,Xie, SS,Gao, Y,et al. Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures[J]. JOURNAL OF CRYSTAL GROWTH,2004,267(1-2):177. |
APA | Wang, JX.,Xie, SS.,Gao, Y.,Yan, XQ.,Liu, DF.,...&Wang, G.(2004).Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures.JOURNAL OF CRYSTAL GROWTH,267(1-2),177. |
MLA | Wang, JX,et al."Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures".JOURNAL OF CRYSTAL GROWTH 267.1-2(2004):177. |
入库方式: OAI收割
来源:物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。