中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures

文献类型:期刊论文

作者Wang, JX ; Xie, SS ; Gao, Y ; Yan, XQ ; Liu, DF ; Yuan, HJ ; Zhou, ZP ; Song, L ; Liu, LF ; Zhou, WY ; Wang, G
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2004
卷号267期号:1-2页码:177
关键词STANNATE THIN-FILMS SENSING CHARACTERISTICS NANOWIRES TRANSPARENT FABRICATION NANOTUBES OXIDES SEMICONDUCTOR NANORIBBONS LITHOGRAPHY
ISSN号0022-0248
通讯作者Xie, SS: Chinese Acad Sci, Ctr Condensed Matter Phys, Adv Mat Inst Phys, Grp A05, Beijing 100080, Peoples R China.
中文摘要Transparent semiconductor Zn2SnO4 nanowires were synthesized for the first time by the thermal evaporation method. The nanowires show a unique periodic structure along the axis of the nanowire. By varying the Zn ratio in the reactants, ZTO nanowires with different morphologies can be achieved. High-resolution transmission microscopy (HRTEM) characterization confirms that the ZTO nanowires are crystalline. PL (photoluminescence) measurement of the ZTO nanowires reveals a green emission band centered at similar to493 nm. Our method provides a simple approach for assembling nanocrystals into one-dimensional periodic nanostructures. These nanostructures may have potential applications for opto-electronic nanodevices and nanosystems. (C) 2004 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/38877]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wang, JX,Xie, SS,Gao, Y,et al. Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures[J]. JOURNAL OF CRYSTAL GROWTH,2004,267(1-2):177.
APA Wang, JX.,Xie, SS.,Gao, Y.,Yan, XQ.,Liu, DF.,...&Wang, G.(2004).Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures.JOURNAL OF CRYSTAL GROWTH,267(1-2),177.
MLA Wang, JX,et al."Growth and characterization of axially periodic Zn2SnO4 (ZTO) nanostructures".JOURNAL OF CRYSTAL GROWTH 267.1-2(2004):177.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。