Growth and luminescence of SiGe self-organized dots
文献类型：期刊论文
| 作者 | Chen, H ; Xie, XG ; Cheng, WQ ; Huang, Q ; Zhou, JM |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 1996 |
| 卷号 | 13期号:8页码:613 |
| 关键词 | STRAINED-LAYER SUPERLATTICES VISIBLE-LIGHT EMISSION POROUS SILICON BAND-GAP PHOTOLUMINESCENCE ELECTROLUMINESCENCE |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, H: CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA. |
| 中文摘要 | It is found that the SiGe alloy self-organizes into uniform quantum dots embedded in the silicon layer during the growth of strained SiGe/Si multilayers on a Si (001) substrate by molecular beam epitaxy. The energy of photoluminescence from the quantum dots is higher than the indirect band-gap of Si, and the luminescence of the quantum dots exceeds that of quantum well by three orders of magnitude. This can be attributed to an indirect-to-direct band-gap conversion in the SiGe dots. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38895]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, H,Xie, XG,Cheng, WQ,et al. Growth and luminescence of SiGe self-organized dots[J]. CHINESE PHYSICS LETTERS,1996,13(8):613. |
| APA | Chen, H,Xie, XG,Cheng, WQ,Huang, Q,&Zhou, JM.(1996).Growth and luminescence of SiGe self-organized dots.CHINESE PHYSICS LETTERS,13(8),613. |
| MLA | Chen, H,et al."Growth and luminescence of SiGe self-organized dots".CHINESE PHYSICS LETTERS 13.8(1996):613. |
入库方式： OAI收割
来源：物理研究所
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