Growth and optical characterization of high-quality GaN nanobelts
文献类型：期刊论文
| 作者 | Zhao, M ; Chen, XL ; Jian, JK ; Zhang, XN ; Zhao, HZ ; Xu, YP |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2005 |
| 卷号 | 283期号:3-4页码:418 |
| 关键词 | GALLIUM NITRIDE NANOBELTS LIGHT-EMITTING DEVICES RAMAN-SCATTERING NANOWIRES BLUE NANORODS SEMICONDUCTORS POWDERS DIODES |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Large quantities of high-quality GaN nanobelts were successfully grown on a Ni-coated LaAlO(3) substrate by a direct reaction of milled Ga(2)O(3) powders and NH(3). The width of the nanobelts is in the range from 100 nm to 1 mu m, and the ratio of thickness to width is about (1)/(10). The maximum length is up to several tens of micrometers. The clear lattice fringes in the high-resolution transmission electron microscopy images indicate the growth of good-quality hexagonal single-crystal GaN nanobelts. The Raman spectrum exhibits two additional peaks at 256 and 422cm(-1). The photo luminescence spectrum reveals a broad, strong blue emission band centered at 2.65 eV. The growth mechanism of the GaN nanobelts is briefly discussed. (c) 2005 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38904]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhao, M,Chen, XL,Jian, JK,et al. Growth and optical characterization of high-quality GaN nanobelts[J]. JOURNAL OF CRYSTAL GROWTH,2005,283(3-4):418. |
| APA | Zhao, M,Chen, XL,Jian, JK,Zhang, XN,Zhao, HZ,&Xu, YP.(2005).Growth and optical characterization of high-quality GaN nanobelts.JOURNAL OF CRYSTAL GROWTH,283(3-4),418. |
| MLA | Zhao, M,et al."Growth and optical characterization of high-quality GaN nanobelts".JOURNAL OF CRYSTAL GROWTH 283.3-4(2005):418. |
入库方式： OAI收割
来源：物理研究所
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