Growth and Si-doping of GaN on GaAs(001) by MBE
文献类型：期刊论文
| 作者 | Huang, Q ; Chen, H ; Li, ZQ ; Liu, HF ; Zhou, JM |
| 刊名 | FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS
 |
| 出版日期 | 2000 |
| 卷号 | 4086页码:306 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY DOPED GAN POTENTIAL FLUCTUATION CUBIC-GAN ZINCBLENDE |
| ISSN号 | 0277-786X |
| 通讯作者 | Huang, Q: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The GaN growth and Si-doped GaN are studied in this work. By means of X-ray diffraction and photoluminescence (PL)measurements we found that the GaN sample directly grown on GaAs substrate is pure cubic phase and that grown on AlAs buffer is pure hexagonal phase. The present study shows that the phase of GaN samples grown on GaAs substrates can be controlled using different buffer layers. The Pt properties of Si-doped cubic GaN with different carrier concentrations were investigated at room temperature. It was found that when the carrier concentration is increased From 5x10(15) to 2x10(18)cm(-3), the Pt peak shifted towards low energy, fi om 3.246 to 3.227eV, and the Pt linewidth increased fi om 77.1 to 121 meV. The PL peak shift is explained by the bandgap narrowing effect due to the high doping concentration. The PL linewidth includes two parts: one is doping concentration-independent, which is caused by the imperfection of samples and phonon scattering; the other is doping concentration-dependent. We assign the second part to the broadening by the microscopic fluctuation of the doping concentration. The experimental measurements are in good agreement with the model. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38915]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Huang, Q,Chen, H,Li, ZQ,et al. Growth and Si-doping of GaN on GaAs(001) by MBE[J]. FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS,2000,4086:306. |
| APA | Huang, Q,Chen, H,Li, ZQ,Liu, HF,&Zhou, JM.(2000).Growth and Si-doping of GaN on GaAs(001) by MBE.FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS,4086,306. |
| MLA | Huang, Q,et al."Growth and Si-doping of GaN on GaAs(001) by MBE".FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS 4086(2000):306. |
入库方式： OAI收割
来源：物理研究所
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