GROWTH AND STABILITY OF ULTRA-THIN Pb FILMS ON Pb/Si(111)-alpha-root 3 x root 3
文献类型:期刊论文
作者 | Li, WJ ; Sun, YJ ; Zhu, XG ; Wang, G ; Zhang, YF ; Jia, JF ; Ma, XC ; Chen, X ; Xue, QK |
刊名 | SURFACE REVIEW AND LETTERS |
出版日期 | 2011 |
卷号 | 18期号:1-2页码:77 |
ISSN号 | 0218-625X |
关键词 | SUPERCONDUCTOR-INSULATOR TRANSITIONS LOW-TEMPERATURE METAL-FILMS QUANTUM ISLANDS SI(111) HEIGHT STATES |
通讯作者 | Li, WJ: Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
中文摘要 | Ultra-thin Pb films with magic thicknesses of 2 monolayer (ML), 4ML and 6ML were prepared of atomically flat on the substrate of Si(111)-alpha-root 3 x root 3 (or SIC phase) at 145 K. Their surface morphologies and stability were studied by low temperature scanning tunneling microscopy and temperature-dependent angle resolved photoemission spectroscopy. We found that the well ordered SIC interface can lower the diffusion barrier and enhance the interface charge transfer, leading to different critical thickness compared to Pb/Si(111)-7 x 7 grown under same conditions. Enhanced thermal expansion coefficients were also observed in ultra-thin Pb films at low temperature. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/38918] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, WJ,Sun, YJ,Zhu, XG,et al. GROWTH AND STABILITY OF ULTRA-THIN Pb FILMS ON Pb/Si(111)-alpha-root 3 x root 3[J]. SURFACE REVIEW AND LETTERS,2011,18(1-2):77. |
APA | Li, WJ.,Sun, YJ.,Zhu, XG.,Wang, G.,Zhang, YF.,...&Xue, QK.(2011).GROWTH AND STABILITY OF ULTRA-THIN Pb FILMS ON Pb/Si(111)-alpha-root 3 x root 3.SURFACE REVIEW AND LETTERS,18(1-2),77. |
MLA | Li, WJ,et al."GROWTH AND STABILITY OF ULTRA-THIN Pb FILMS ON Pb/Si(111)-alpha-root 3 x root 3".SURFACE REVIEW AND LETTERS 18.1-2(2011):77. |
入库方式: OAI收割
来源:物理研究所
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