Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)
文献类型：期刊论文
| 作者 | Xue, QZ ; Xue, QK ; Kuwano, S ; Nakayama, K ; Sakurai, T |
| 刊名 | CHINESE PHYSICS
 |
| 出版日期 | 2001 |
| 卷号 | 10页码:S157 |
| 关键词 | MOLECULAR-BEAM EPITAXY HOMOEPITAXIAL GROWTH 6H-SIC(0001) SURFACE LASER-DIODES GAN MORPHOLOGY SUBSTRATE GAN(0001) POLARITY HYDROGEN |
| ISSN号 | 1009-1963 |
| 通讯作者 | Xue, QK: Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan. |
| 中文摘要 | Two-dimensional growth of GaN thin films on an atomically flat C-face 6H-SiC(000 (1) over bar) surface prepared by ultra, high vacuum Si-etching is observed when using an AIN buffer layer in N plasma-assisted molecular beam epitaxy. Scanning tunneling microscopy and reflection high energy electron diffraction observations reveal a series of Ga-stabilized reconstructions which are consistent with those reported for an N-polar GaN(000 (1) over bar) film. The result, including the effect observed previously for GaN thin film on Si-terminated 6H-SiC(0001), agrees with the polarity assignment of heteroepitaxial wurtzite GaN films on polar 6H-SiC substrates, i.e., GaN film grown on SiC(000 (1) over bar) is < 000<(1)over bar> > oriented (N-face) while that on SiC(0001) is < 0001 > oriented (Ga-face). |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38930]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, QZ,Xue, QK,Kuwano, S,et al. Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)[J]. CHINESE PHYSICS,2001,10:S157. |
| APA | Xue, QZ,Xue, QK,Kuwano, S,Nakayama, K,&Sakurai, T.(2001).Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar).CHINESE PHYSICS,10,S157. |
| MLA | Xue, QZ,et al."Growth mode and surface reconstruction of GaN(000(1)over-bar) thin films on 6H-SiC(000(1)over-bar)".CHINESE PHYSICS 10(2001):S157. |
入库方式： OAI收割
来源：物理研究所
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