Growth model of textured diamond (111) film in CH4/O-2/H-2 atmosphere
文献类型：期刊论文
| 作者 | Wu, J ; Xie, FQ ; Zhang, QZ ; Liu, JW ; Chen, YC ; Lin, ZD |
| 刊名 | ACTA PHYSICA SINICA-OVERSEAS EDITION
 |
| 出版日期 | 1999 |
| 卷号 | 8期号:12页码:932 |
| 关键词 | BIAS-ENHANCED NUCLEATION THIN-FILMS SILICON DEPOSITION |
| ISSN号 | 1004-423X |
| 通讯作者 | Wu, J: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Partially oriented and highly textured diamond films on Si(111) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5 x 10(8) cm(-2) was realized in 3 min by near-surface glow discharge. The as-grown films were characterized. by scanning electron microscopy (SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH4/H-2, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond(111) surface was demonstrated to be in Stranski-Krastanov model by SEM. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38933]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wu, J,Xie, FQ,Zhang, QZ,et al. Growth model of textured diamond (111) film in CH4/O-2/H-2 atmosphere[J]. ACTA PHYSICA SINICA-OVERSEAS EDITION,1999,8(12):932. |
| APA | Wu, J,Xie, FQ,Zhang, QZ,Liu, JW,Chen, YC,&Lin, ZD.(1999).Growth model of textured diamond (111) film in CH4/O-2/H-2 atmosphere.ACTA PHYSICA SINICA-OVERSEAS EDITION,8(12),932. |
| MLA | Wu, J,et al."Growth model of textured diamond (111) film in CH4/O-2/H-2 atmosphere".ACTA PHYSICA SINICA-OVERSEAS EDITION 8.12(1999):932. |
入库方式： OAI收割
来源：物理研究所
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