Growth of bulk GaN single crystals by flux method
文献类型：期刊论文
| 作者 | Chen, XL |
| 刊名 | SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
 |
| 出版日期 | 2005 |
| 卷号 | 6期号:7页码:766 |
| 关键词 | LIGHT-EMITTING-DIODES THERMAL-DECOMPOSITION NITROGEN SYSTEM WURTZITE GAN LI3N TEMPERATURE LITHIUM HEAT NA |
| ISSN号 | 1468-6996 |
| 通讯作者 | Chen, XL: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The progresses on the growth of bulk GaN crystals by the flux method in our research group are reported in this review. The research work is mainly focused on the ternary system Li-Ga-N. The phase relations are constructed by the calculation of phase diagram (CALPHAD) technique based on the optimized thermodynamic data of the corresponding binary systems Li-N, Li-Ga and Ga-N. There exists a two-phase region of liquid + GaN at above 750 degrees C. The well-crystallized, transparent GaN plate-like crystals up to a size of 4 mm can be grown from the Li-Ga-N system under pressures of 1-2 N-2 atmospheres. The yield and quality of the GaN crystals depend on the composition of the starting materials, the growth temperature, the cooling rate, and the position of Li3N in the crucible. Efforts are still needed to further enlarge the size of crystals. (c) 2005 Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38949]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, XL. Growth of bulk GaN single crystals by flux method[J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,2005,6(7):766. |
| APA | Chen, XL.(2005).Growth of bulk GaN single crystals by flux method.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,6(7),766. |
| MLA | Chen, XL."Growth of bulk GaN single crystals by flux method".SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 6.7(2005):766. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。