Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition
文献类型：期刊论文
| 作者 | Li, YC ; Su, LL ; Cao, LM ; Zhao, JH ; Wang, HY ; Nan, Y ; Gao, ZS ; Wang, WK |
| 刊名 | SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY
 |
| 出版日期 | 2003 |
| 卷号 | 46期号:1页码:47 |
| ISSN号 | 1672-1799 |
| 通讯作者 | Li, YC: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Bulk single crystals beta-FeSi2, as a new photoelectric and thermoelectric material, has been successfully grown using chemical vapor transport technique by using iodine as transport agent in a sealed ampoule. The effects of crystal growth condition on quality and morphologies of the single crystals were studied. Both needle-like and grain-like single crystals were gained. By changing substrate temperature, tetrahedral high quality alpha-FeSi2 single crystals were also obtained. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38950]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Li, YC,Su, LL,Cao, LM,et al. Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition[J]. SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,2003,46(1):47. |
| APA | Li, YC.,Su, LL.,Cao, LM.,Zhao, JH.,Wang, HY.,...&Wang, WK.(2003).Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition.SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY,46(1),47. |
| MLA | Li, YC,et al."Growth of bulk single crystals beta-FeSi2 by chemical vapour deposition".SCIENCE IN CHINA SERIES G-PHYSICS ASTRONOMY 46.1(2003):47. |
入库方式： OAI收割
来源：物理研究所
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