Growth of Co nanoclusters on Si3N4 surface formed on Si(111)
文献类型:期刊论文
作者 | Liu, X ; Jia, JF ; Wang, JZ ; Xue, QK |
刊名 | CHINESE PHYSICS LETTERS
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出版日期 | 2003 |
卷号 | 20期号:10页码:1871 |
关键词 | SCANNING-TUNNELING-MICROSCOPY SELF-ORGANIZED GROWTH ROOM-TEMPERATURE THIN-FILMS SUPERLATTICES NANOSTRUCTURE NANOCRYSTALS CLUSTERS CRYSTAL AU(111) |
ISSN号 | 0256-307X |
通讯作者 | Xue, QK: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | We have grown high density Co clusters with a narrow-sized distribution on the Si3N4(0001)-(8 x 8) surface. In the submonolayer regime, Co clusters tend to keep a certain size (similar to1.45 nm in diameter) irrespective of coverage. With increasing coverage above 0.92 ML, two new clusters with certain but larger sizes are formed. This novel growth behaviour can be explained by the quantum size effect [Phys. Rev. Lett. 90 (2003) 185506]. It is found that the Co cluster size distribution can be improved by post annealing. Even at high temperature (700degrees C), no reaction of Co with Si3N4 is observed, indicating that Si3N4 (0001)-(8 x 8) is a promising substrate for growth of magnetic nanostructures. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/38955] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Liu, X,Jia, JF,Wang, JZ,et al. Growth of Co nanoclusters on Si3N4 surface formed on Si(111)[J]. CHINESE PHYSICS LETTERS,2003,20(10):1871. |
APA | Liu, X,Jia, JF,Wang, JZ,&Xue, QK.(2003).Growth of Co nanoclusters on Si3N4 surface formed on Si(111).CHINESE PHYSICS LETTERS,20(10),1871. |
MLA | Liu, X,et al."Growth of Co nanoclusters on Si3N4 surface formed on Si(111)".CHINESE PHYSICS LETTERS 20.10(2003):1871. |
入库方式: OAI收割
来源:物理研究所
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