Growth of GaN single crystals by Ca3N2 flux
文献类型：期刊论文
| 作者 | Wang, G ; Yuan, WX ; Jian, JK ; Bao, HQ ; Wang, JF ; Chen, XL ; Liang, JK |
| 刊名 | SCRIPTA MATERIALIA
 |
| 出版日期 | 2008 |
| 卷号 | 58期号:4页码:319 |
| ISSN号 | 1359-6462 |
| 中文摘要 | This paper reports recent progress on GaN single crystal growth by Ca3N2 flux. The isothermal phase diagrams of the Ca-Ga-N system were predicted from the corresponding binary systems by CALPHAD. Well-crystallized GaN crystals up to 1.5 mm were grown from the Ca-Ga-N system at 900 degrees C under 0.2 MPa N-2 pressure. It was found that the crystal size depended on the molar ratio of starting materials, the temperature and the duration of growth. A growth mechanism involving two-step reactions is proposed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 收录类别 | SCI |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38958]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, G,Yuan, WX,Jian, JK,et al. Growth of GaN single crystals by Ca3N2 flux[J]. SCRIPTA MATERIALIA,2008,58(4):319. |
| APA | Wang, G.,Yuan, WX.,Jian, JK.,Bao, HQ.,Wang, JF.,...&Liang, JK.(2008).Growth of GaN single crystals by Ca3N2 flux.SCRIPTA MATERIALIA,58(4),319. |
| MLA | Wang, G,et al."Growth of GaN single crystals by Ca3N2 flux".SCRIPTA MATERIALIA 58.4(2008):319. |
入库方式： OAI收割
来源：物理研究所
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