Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation V/III Ratio
文献类型：期刊论文
| 作者 | Zhang, J ; Guo, LW ; Xing, ZG ; Ge, BH ; Ding, GJ ; Peng, MZ ; Jia, HQ ; Zhou, JM ; Chen, H |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:12页码:4449 |
| 关键词 | LIGHT-EMITTING-DIODES X-RAY-DIFFRACTION ALGAN LAYERS HIGH-QUALITY GAN FILMS SAPPHIRE OPERATION |
| ISSN号 | 0256-307X |
| 通讯作者 | Zhang, J: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | High quality and highly conductive n-type Al0.7Ga0.3N films are obtained by using AlN multi-step layers (MSL) with periodical variation of V/III rations by low-pressure metalorganic chemical vapour deposition (LP-MOCVD). The full-width at half-maximum (FWHM) of (0002) and (1015) rocking curves of the Si-doped Al0.07Ga0.3 N layer are 519 and 625 arcsec, respectively. Room temperature (RT) Hall measurement shows a free electron concentration of 2.9 x 10(19) cm(-3), and mobility of 17.8 cm(2)V(-1)s(-1), corresponding to a resistivity of 0.0121 Omega cm. High conductivity of the Si-doped AlGan film with such high Al more fraction in mainly contributed by a remarkable reduction of threading dislocations (TDs) in AlGaN layer. The TD reducting mechanism in AlN MSL growth with periodical variation of V/III ratio is discussed in detail. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [10574148]; National High-Tech Research and Development Programme of China [2006AA03A106, 2006AA03A107]; National Basic Research Programme of China [2006CB921300] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38963]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Zhang, J,Guo, LW,Xing, ZG,et al. Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation V/III Ratio[J]. CHINESE PHYSICS LETTERS,2008,25(12):4449. |
| APA | Zhang, J.,Guo, LW.,Xing, ZG.,Ge, BH.,Ding, GJ.,...&Chen, H.(2008).Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation V/III Ratio.CHINESE PHYSICS LETTERS,25(12),4449. |
| MLA | Zhang, J,et al."Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AlN Buffer with Periodical Variation V/III Ratio".CHINESE PHYSICS LETTERS 25.12(2008):4449. |
入库方式： OAI收割
来源：物理研究所
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