Growth of Mn5Ge3 ultrathin film on Ge(111)
文献类型：期刊论文
| 作者 | Chen, LJ ; Wang, DY ; Zhan, QF ; He, W ; Li, QA ; Cheng, ZH |
| 刊名 | CHINESE PHYSICS B
 |
| 出版日期 | 2008 |
| 卷号 | 17期号:10页码:3902 |
| 关键词 | SEMICONDUCTOR ALLOYS MNXGE1-X |
| ISSN号 | 1674-1056 |
| 通讯作者 | Chen, LJ: Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100190, Peoples R China. |
| 中文摘要 | The growth of Mn5Ge3 ultrathin films with different thicknesses, prepared by solid phase epitaxy, is studied. The results of scanning tunnelling microscopy and low energy electron diffraction studies show that the film can be formed and it is terminated with a (root 3 x root 3) R30 degrees surface reconstruction when the thickness of Mn exceeds 3 monolayers. The magnetic properties show that the Curie temperature is about 300 K and the T-2-dependent behaviour is observed to remain up to 220 K. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38975]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Chen, LJ,Wang, DY,Zhan, QF,et al. Growth of Mn5Ge3 ultrathin film on Ge(111)[J]. CHINESE PHYSICS B,2008,17(10):3902. |
| APA | Chen, LJ,Wang, DY,Zhan, QF,He, W,Li, QA,&Cheng, ZH.(2008).Growth of Mn5Ge3 ultrathin film on Ge(111).CHINESE PHYSICS B,17(10),3902. |
| MLA | Chen, LJ,et al."Growth of Mn5Ge3 ultrathin film on Ge(111)".CHINESE PHYSICS B 17.10(2008):3902. |
入库方式： OAI收割
来源：物理研究所
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