Growth of nanoscale InGaN self-assembled quantum dots
文献类型：期刊论文
| 作者 | Ji, LW ; Su, YK ; Chang, SJ ; Wu, LW ; Fang, TH ; Chen, JF ; Tsai, TY ; Xue, QK ; Chen, SC |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 249期号:1-2页码:144 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY GAN SURFACES DIODES |
| ISSN号 | 0022-0248 |
| 通讯作者 | Chang, SJ: Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, 1 Ta Hseuh Rd, Tainan 70101, Taiwan. |
| 中文摘要 | It has been demonstrated that we can use interrupted growth mode in metalorganic chemical vapor deposition (MOCVD) to fabricate nanoscale InGaN self-assembed quantum dots (QDs). With a 12-s growth interruption, we successfully formed InGaN QDs with a typical lateral size of 25 nm and an average height of 4.1 nm. The QDs density is about 2 x 10(10) cm(-2). In contrast, much larger InGaN QDs were obtained without growth interruption. Compared with samples prepared without growth interrupt, a much larger photoluminescence (PL) intensity and a large 67meV PL blue shift was observed from samples prepared with growth interrupt. These results suggest such a growth interrupt method is potentially useful in nitride-based optoelectronic devices grown by MOCVD. (C) 2002 Elsevier Science B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38977]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Ji, LW,Su, YK,Chang, SJ,et al. Growth of nanoscale InGaN self-assembled quantum dots[J]. JOURNAL OF CRYSTAL GROWTH,2003,249(1-2):144. |
| APA | Ji, LW.,Su, YK.,Chang, SJ.,Wu, LW.,Fang, TH.,...&Chen, SC.(2003).Growth of nanoscale InGaN self-assembled quantum dots.JOURNAL OF CRYSTAL GROWTH,249(1-2),144. |
| MLA | Ji, LW,et al."Growth of nanoscale InGaN self-assembled quantum dots".JOURNAL OF CRYSTAL GROWTH 249.1-2(2003):144. |
入库方式： OAI收割
来源：物理研究所
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