Growth of single domain monatomic in chain arrays on vicinal Si(001) surface
文献类型：期刊论文
| 作者 | Dou, RF ; Jia, JF ; Xu, MJ ; Pan, MH ; Ke, H ; Zhang, LJ ; Xue, QK |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2004 |
| 卷号 | 53期号:3页码:871 |
| 关键词 | METAL CHAINS GOLD ATOMS INDIUM STEPS SI(100) LAYER |
| ISSN号 | 1000-3290 |
| 通讯作者 | Xue, QK: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Using a vicinal Si(001) surface with 4degreesmiscut along [110] direction as a substrate, I we have fabricated single-domain monatomic In chain arrays on a large scale. High-resolution scanning tunneling microscopic images reveal that the deposited In atoms preferentially form In dimers between the two neighboring Si dimer rows on the lower terrace along the step edge, due to the high coordination of these positions. Indium dimers remove dangling bonds of the Si dimers and saturate all In valency,and then develop into a long monatomic In chain along the step edge. It is worth highlighting that the ordered narrow terrace and the straight D-B steps edge are key to the formation of the monatomic In chains. |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/38994]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dou, RF,Jia, JF,Xu, MJ,et al. Growth of single domain monatomic in chain arrays on vicinal Si(001) surface[J]. ACTA PHYSICA SINICA,2004,53(3):871. |
| APA | Dou, RF.,Jia, JF.,Xu, MJ.,Pan, MH.,Ke, H.,...&Xue, QK.(2004).Growth of single domain monatomic in chain arrays on vicinal Si(001) surface.ACTA PHYSICA SINICA,53(3),871. |
| MLA | Dou, RF,et al."Growth of single domain monatomic in chain arrays on vicinal Si(001) surface".ACTA PHYSICA SINICA 53.3(2004):871. |
入库方式： OAI收割
来源：物理研究所
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