Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs1-ySby Grown on GaAs by Molecular Beam Epitaxy
文献类型：期刊论文
| 作者 | Gao, HC ; Wang, WX ; Jiang, ZW ; Liu, J ; Yang, CL ; Wu, DZ ; Zhou, JM ; Chen, H |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2008 |
| 卷号 | 25期号:12页码:4466 |
| 关键词 | HETEROJUNCTION BIPOLAR-TRANSISTORS GROUP-V ELEMENTS THERMODYNAMIC ANALYSIS SEMICONDUCTORS INP |
| ISSN号 | 0256-307X |
| 通讯作者 | Gao, HC: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | A series of GaAs1-ySby epilayers are grown on GaAs substrates under different growth conditions. Different antimony compositions of samples with beryllium doping are obtained. A non-equilibrium thermodynamics model is used to calibrate and fit the Sb composition. Activation energy of 0.37 eV for the dissociation process of Sb-4 molecules is obtained. Carrier mobility and concentration of samples are influenced by the Sb composition. Quasi-qualitative analysis of mobility is used to explain the relations among Sb composition, carrier mobility and concentration. High resolution x-ray diffraction (HRXRD) rocking curves and Hall effects measurements are used to determine the crystal quality, carrier mobility and concentration. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50572120] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39014]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Gao, HC,Wang, WX,Jiang, ZW,et al. Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs1-ySby Grown on GaAs by Molecular Beam Epitaxy[J]. CHINESE PHYSICS LETTERS,2008,25(12):4466. |
| APA | Gao, HC.,Wang, WX.,Jiang, ZW.,Liu, J.,Yang, CL.,...&Chen, H.(2008).Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs1-ySby Grown on GaAs by Molecular Beam Epitaxy.CHINESE PHYSICS LETTERS,25(12),4466. |
| MLA | Gao, HC,et al."Growth, Antimony Incorporation Behaviour and Beryllium Doping of GaAs1-ySby Grown on GaAs by Molecular Beam Epitaxy".CHINESE PHYSICS LETTERS 25.12(2008):4466. |
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来源：物理研究所
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