H-2-assisted control growth of Si nanowires
文献类型：期刊论文
| 作者 | Yan, XQ ; Liu, DF ; Ci, LJ ; Wang, JX ; Zhou, ZP ; Yuan, HJ ; Song, L ; Gao, Y ; Liu, LF ; Zhou, WY ; Wang, G ; Xie, SS |
| 刊名 | JOURNAL OF CRYSTAL GROWTH
 |
| 出版日期 | 2003 |
| 卷号 | 257期号:1-2页码:69 |
| 关键词 | CHEMICAL-VAPOR-DEPOSITION SILICON NANOWIRES REACTION-MECHANISM SILANE KINETICS SURFACE WIRES |
| ISSN号 | 0022-0248 |
| 通讯作者 | Xie, SS: Chinese Acad Sci, Ctr Condensed Matter Phys, Inst Phys, A05 Grp, Beijing 100080, Peoples R China. |
| 中文摘要 | Large-scale desired silicon nanowires without amorphous silicon oxide sheath have been synthesized by thermal chemical vapor deposition using SiH4 gas at 650degreesC in a flow mixture of H-2 and N-2, compared with the short and thick Si nanowires with amorphous SiOx coating obtained in N-2. Scanning electron microscopy (SEM), Energy dispersive X-ray spectrometry (EDX) analysis, and high-resolution transmission electron microscopy (HRTEM) have been employed to characterize the Si nanowires. The effects of H-2 gas on the catalytic particle size and on the formation of Si nanowires are discussed in detail. Photoluminescence (PL) characteristics further demonstrate the large differences between the H-2-assisted grown Si nanowires and the Si nanowires grown in N-2. (C) 2003 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39037]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yan, XQ,Liu, DF,Ci, LJ,et al. H-2-assisted control growth of Si nanowires[J]. JOURNAL OF CRYSTAL GROWTH,2003,257(1-2):69. |
| APA | Yan, XQ.,Liu, DF.,Ci, LJ.,Wang, JX.,Zhou, ZP.,...&Xie, SS.(2003).H-2-assisted control growth of Si nanowires.JOURNAL OF CRYSTAL GROWTH,257(1-2),69. |
| MLA | Yan, XQ,et al."H-2-assisted control growth of Si nanowires".JOURNAL OF CRYSTAL GROWTH 257.1-2(2003):69. |
入库方式： OAI收割
来源：物理研究所
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