中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Hall coefficient of Dirac fermions in graphene under charged impurity scatterings

文献类型:期刊论文

作者Yan, XZ ; Ting, CS
刊名PHYSICAL REVIEW B
出版日期2009
卷号80期号:15
关键词DISORDERED DEGENERATE SEMICONDUCTORS CRITICAL-BEHAVIOR BERRYS PHASE TRANSPORT ELECTRON
ISSN号1098-0121
通讯作者Yan, XZ: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100190, Peoples R China.
中文摘要With a conserving formalism within the self-consistent Born approximation, we study the Hall conductivity of Dirac fermions in graphene under charged impurity scatterings. The calculated inverse Hall coefficient is compared with the experimental data. It is shown that the present calculations for the Hall coefficient and the electric conductivity are in good agreement with the experimental measurements.
收录类别SCI
资助信息Robert A. Welch Foundation [E-1146]; TCSUH; National Basic Research 973 Program of China [2005CB623602]; NSFC [10774171, 10834011]
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/39066]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Yan, XZ,Ting, CS. Hall coefficient of Dirac fermions in graphene under charged impurity scatterings[J]. PHYSICAL REVIEW B,2009,80(15).
APA Yan, XZ,&Ting, CS.(2009).Hall coefficient of Dirac fermions in graphene under charged impurity scatterings.PHYSICAL REVIEW B,80(15).
MLA Yan, XZ,et al."Hall coefficient of Dirac fermions in graphene under charged impurity scatterings".PHYSICAL REVIEW B 80.15(2009).

入库方式: OAI收割

来源:物理研究所

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