Hall coefficient of Dirac fermions in graphene under charged impurity scatterings
文献类型:期刊论文
作者 | Yan, XZ ; Ting, CS |
刊名 | PHYSICAL REVIEW B
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出版日期 | 2009 |
卷号 | 80期号:15 |
关键词 | DISORDERED DEGENERATE SEMICONDUCTORS CRITICAL-BEHAVIOR BERRYS PHASE TRANSPORT ELECTRON |
ISSN号 | 1098-0121 |
通讯作者 | Yan, XZ: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100190, Peoples R China. |
中文摘要 | With a conserving formalism within the self-consistent Born approximation, we study the Hall conductivity of Dirac fermions in graphene under charged impurity scatterings. The calculated inverse Hall coefficient is compared with the experimental data. It is shown that the present calculations for the Hall coefficient and the electric conductivity are in good agreement with the experimental measurements. |
收录类别 | SCI |
资助信息 | Robert A. Welch Foundation [E-1146]; TCSUH; National Basic Research 973 Program of China [2005CB623602]; NSFC [10774171, 10834011] |
语种 | 英语 |
公开日期 | 2013-09-17 |
源URL | [http://ir.iphy.ac.cn/handle/311004/39066] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yan, XZ,Ting, CS. Hall coefficient of Dirac fermions in graphene under charged impurity scatterings[J]. PHYSICAL REVIEW B,2009,80(15). |
APA | Yan, XZ,&Ting, CS.(2009).Hall coefficient of Dirac fermions in graphene under charged impurity scatterings.PHYSICAL REVIEW B,80(15). |
MLA | Yan, XZ,et al."Hall coefficient of Dirac fermions in graphene under charged impurity scatterings".PHYSICAL REVIEW B 80.15(2009). |
入库方式: OAI收割
来源:物理研究所
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