中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Hall effect in La(1.85)Sr(0.15)Cu(1-x)VxO(4+delta) system

文献类型:期刊论文

作者Liu, LH ; Che, GC ; Zhao, ZX
刊名PHYSICA B-CONDENSED MATTER
出版日期2003
卷号339期号:2-3页码:101
关键词HOLE CONCENTRATION PEROVSKITES
ISSN号0921-4526
通讯作者Liu, LH: Chinese Acad Sci, Inst Phys, Natl Lab Supercond, POB 603, Beijing 100080, Peoples R China.
中文摘要The Hall effect has been measured in the V-doped La1.85Sr0.15Cu1-xVxO4+delta system for the temperature 50-300 K. In all samples 1/R-H varies linearly with temperature. Carrier density decreases as the V content x increases in a 1/x manner. T-c* (= T-c/T-c(max)) decreases with the increase of V content and can be roughly described as T-c* = [1 - C((1/R-H)(opt) - (1/R-H))(4)]. (C) 2003 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/39068]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, LH,Che, GC,Zhao, ZX. Hall effect in La(1.85)Sr(0.15)Cu(1-x)VxO(4+delta) system[J]. PHYSICA B-CONDENSED MATTER,2003,339(2-3):101.
APA Liu, LH,Che, GC,&Zhao, ZX.(2003).Hall effect in La(1.85)Sr(0.15)Cu(1-x)VxO(4+delta) system.PHYSICA B-CONDENSED MATTER,339(2-3),101.
MLA Liu, LH,et al."Hall effect in La(1.85)Sr(0.15)Cu(1-x)VxO(4+delta) system".PHYSICA B-CONDENSED MATTER 339.2-3(2003):101.

入库方式: OAI收割

来源:物理研究所

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