Heavy ion induced damage and annealing processes in silicon
文献类型：期刊论文
| 作者 | I. F. Bubb ; D. J. Chivers ; J. R. Liu ; A. P. Pogany ; K. T. Short ; H. K. Wagenfeld ; J. S. Williams |
| 刊名 | Nucl. Inst. Meth. B
 |
| 出版日期 | 1984 |
| 卷号 | 2期号:1-3页码:761 |
| 中文摘要 | Heavy ion damage in silicon has been investigated by ion channeling and transmission electron microscopy techniques. Implantation temperatures between 77 K and 720 K have been employed. Our results suggest that significant annealing of displacement damage can take place during implantation at temperatures as low as 77 K. Important differences in the amount of damage are observed in (100) and (111) substrates. For elevated temperature implantations, our results suggest a new mechanism for amorphous phase production. |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39123]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | I. F. Bubb,D. J. Chivers,J. R. Liu,et al. Heavy ion induced damage and annealing processes in silicon[J]. Nucl. Inst. Meth. B,1984,2(1-3):761. |
| APA | I. F. Bubb.,D. J. Chivers.,J. R. Liu.,A. P. Pogany.,K. T. Short.,...&J. S. Williams.(1984).Heavy ion induced damage and annealing processes in silicon.Nucl. Inst. Meth. B,2(1-3),761. |
| MLA | I. F. Bubb,et al."Heavy ion induced damage and annealing processes in silicon".Nucl. Inst. Meth. B 2.1-3(1984):761. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。