中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy

文献类型:期刊论文

作者Xiang, WF ; Lu, HB ; Chen, ZH ; Lu, XB ; He, M ; Tian, H ; Zhou, YL ; Li, CR ; Ma, XL
刊名JOURNAL OF CRYSTAL GROWTH
出版日期2004
卷号271期号:1-2页码:165
关键词THIN-FILMS BUFFER LAYERS IN-SITU SRTIO3 SI(100) DEPOSITION SILICON MOCVD
ISSN号0022-0248
通讯作者Xiang, WF: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Spontaneous emergence of nanoscaled structures provides a potential alternative to the conventional bottom-up and top-down fabrication techniques. By a two-step thermal evaporation of mixed Ag2O and SiO2 powder onto sapphire substrate, concentric Ag/SiOx spherules were assembled into a triangular pattern upon cooling on the spherical surface of large particles, which, of generally a few microns in dimension, were primarily grown with the substrate held at 1270 K. The occasional presence of pentagon or heptagon defect, as required by the spherical geometry of the primary particle, was also recognized. Strain field in the oxide shell arising from expansion mismatch with the silver core seeds the subsequent nucleation events. The triangular pattern of the secondary nanoparticles can be accounted for with a minimized strain energy in the spherical surface. The self-assembled structure of striking uniformity is promising for the generation of a large family of building blocks for device production. (C) 2004 American Institute of Physics.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/39135]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Xiang, WF,Lu, HB,Chen, ZH,et al. Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy[J]. JOURNAL OF CRYSTAL GROWTH,2004,271(1-2):165.
APA Xiang, WF.,Lu, HB.,Chen, ZH.,Lu, XB.,He, M.,...&Ma, XL.(2004).Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy.JOURNAL OF CRYSTAL GROWTH,271(1-2),165.
MLA Xiang, WF,et al."Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy".JOURNAL OF CRYSTAL GROWTH 271.1-2(2004):165.

入库方式: OAI收割

来源:物理研究所

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