High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires
文献类型：期刊论文
| 作者 | Dong, HB ; Zhang, XX ; Zhao, D ; Niu, ZQ ; Zeng, QS ; Li, JZ ; Cai, L ; Wang, YC ; Zhou, WY ; Gao, M ; Xie, SS |
| 刊名 | NANOSCALE
 |
| 出版日期 | 2012 |
| 卷号 | 4期号:8页码:2571 |
| 关键词 | NIO IMPROVEMENT MECHANISMS FILM |
| ISSN号 | 2040-3364 |
| 通讯作者 | Zhou, WY: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The resistive switching behavior of metal-oxide-metal nanoscale devices is a fascinating phenomenon of next generation nonvolatile memories. Here, we demonstrate nanoscale memristive devices based on Zn2SnO4 nanowires (ZTO NWs) for the first time. The devices show high performance bipolar resistive switching behaviors, including an ultrafast response speed of 20 ns, a low operation voltage of <2 V and long data retention (over 5 months). A physical model of metal filament formation along the ZTO NWs has been suggested to explain the bipolar resistive switching behavior. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50871060, 51072006, 90921012]; National Basic Research Program of China [2012CB932302, 2010CB832905] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39195]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Dong, HB,Zhang, XX,Zhao, D,et al. High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires[J]. NANOSCALE,2012,4(8):2571. |
| APA | Dong, HB.,Zhang, XX.,Zhao, D.,Niu, ZQ.,Zeng, QS.,...&Xie, SS.(2012).High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires.NANOSCALE,4(8),2571. |
| MLA | Dong, HB,et al."High performance bipolar resistive switching memory devices based on Zn2SnO4 nanowires".NANOSCALE 4.8(2012):2571. |
入库方式： OAI收割
来源：物理研究所
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