Highly conductive Nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy
文献类型：期刊论文
| 作者 | Yan, L ; Lu, HB ; Chen, ZH ; Dai, SY ; Tan, GT ; Yang, GZ |
| 刊名 | CHINESE PHYSICS LETTERS
 |
| 出版日期 | 2001 |
| 卷号 | 18期号:11页码:1513 |
| 关键词 | BATIO3/SRTIO3 SUPERLATTICES SRTIO3 DEPOSITION |
| ISSN号 | 0256-307X |
| 通讯作者 | Chen, ZH: Chinese Acad Sci, Inst Phys, Lab Opt Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | The n-type conductive BaNb0.3Ti0.7O3 thin films were grown on SrTiO3(001) substrates by computer-controlled laser molecular beam epitaxy. The BaNb0.3Ti0.7O3 films with (001) orientation are epitaxially grown on SrTiO3 substrates, as confirmed by x-ray diffraction techniques. The root-mean-square surface roughness of the deposited thin films is measured to be 0.24 nm by atomic force microscopy. The resistivity, carrier concentration and mobility of the BaNb0.3Ti0.7O3 thin film are 5.9 x 10(-4) Omega .cm, 1.8 x 10(21)cm(-3) and 10.7cm(2).V-1.s(-1) at room temperature, respectively, which are the best values in Nb-doped BaTiO3 thin films reported so far to our knowledge. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39312]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yan, L,Lu, HB,Chen, ZH,et al. Highly conductive Nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy[J]. CHINESE PHYSICS LETTERS,2001,18(11):1513. |
| APA | Yan, L,Lu, HB,Chen, ZH,Dai, SY,Tan, GT,&Yang, GZ.(2001).Highly conductive Nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy.CHINESE PHYSICS LETTERS,18(11),1513. |
| MLA | Yan, L,et al."Highly conductive Nb-doped BaTiO3 epitaxial thin films grown by laser molecular beam epitaxy".CHINESE PHYSICS LETTERS 18.11(2001):1513. |
入库方式： OAI收割
来源：物理研究所
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