Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001)
文献类型：期刊论文
| 作者 | Pan, Y ; Zhang, HG ; Shi, DX ; Sun, JT ; Du, SX ; Liu, F ; Gao, HJ |
| 刊名 | ADVANCED MATERIALS
 |
| 出版日期 | 2009 |
| 卷号 | 21期号:27页码:2777 |
| 关键词 | GENERALIZED GRADIENT APPROXIMATION P-N-JUNCTIONS ELECTRONIC-STRUCTURE GRAPHITE CARBON EXCHANGE SURFACES FIELD GAS STM |
| ISSN号 | 0935-9648 |
| 通讯作者 | Gao, HJ: Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The ferroelastic phase transition and shape memory effect in La-modified lead zirconate titanate ferroelectric ceramics are demonstrated directly through the temperature-dependent macroscopic recoverable strain measured in a three-point bending configuration. X-ray diffraction measurements reveal that non-180 degrees domain switching occurs in the mechanically poled sample in two different ways at the bottom and top of the sample which have been under tensile and compressive stresses, respectively. The calculated fraction of non-180 degrees switched domains in the poled sample increases nonlinearly with the applied force and shows a saturation trend, which is consistent with the nonlinear behavior of the remnant strain. This study confirms that the mechanical stress applied upon cooling ferroelectric ceramics from the paraelectric to the ferroelectric phase can easily activate ferroelastic domain switching and give rise to preferred domain orientation and consequent macroscopic remnant strain which results in a history effect and shape memory effect via the ferroelastic phase transition. |
| 收录类别 | SCI |
| 资助信息 | National Science Foundation of China; National "863" and "973" projects of China; Chinese Academy of Sciences; Supercomputing Center, CNIC, CAS; DOE |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39341]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Pan, Y,Zhang, HG,Shi, DX,et al. Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001)[J]. ADVANCED MATERIALS,2009,21(27):2777. |
| APA | Pan, Y.,Zhang, HG.,Shi, DX.,Sun, JT.,Du, SX.,...&Gao, HJ.(2009).Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001).ADVANCED MATERIALS,21(27),2777. |
| MLA | Pan, Y,et al."Highly Ordered, Millimeter-Scale, Continuous, Single-Crystalline Graphene Monolayer Formed on Ru (0001)".ADVANCED MATERIALS 21.27(2009):2777. |
入库方式： OAI收割
来源：物理研究所
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