High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Wang, SM ; Gu, QF ; Wei, YQ ; Sadeghi, M ; Larsson, A ; Zhao, QX ; Wang, XD ; Ma, CH ; Xing, ZG |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2005 |
| 卷号 | 87期号:14 |
| 关键词 | GAINNAS PHOTOLUMINESCENCE GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Wang, SM: Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden. |
| 中文摘要 | High-quality GaNAs/GaAs quantum wells with high substitutional N concentrations, grown by molecular-beam epitaxy, are demonstrated using a reduced growth rate in a range of 0.125-1 mu m/h. No phase separation is observed and the GaNAs well thickness is limited by the critical thickness. Strong room-temperature photoluminescence with a record long wavelength of 1.44 mu m is obtained from an 18-nm-thick GaN0.06As0.94/GaAs quantum well. (C) 2005 American Institute of Physics. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39413]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wang, SM,Gu, QF,Wei, YQ,et al. High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy[J]. APPLIED PHYSICS LETTERS,2005,87(14). |
| APA | Wang, SM.,Gu, QF.,Wei, YQ.,Sadeghi, M.,Larsson, A.,...&Xing, ZG.(2005).High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy.APPLIED PHYSICS LETTERS,87(14). |
| MLA | Wang, SM,et al."High-quality GaNAs/GaAs quantum wells with light emission up to 1.44 mu m grown by molecular-beam epitaxy".APPLIED PHYSICS LETTERS 87.14(2005). |
入库方式： OAI收割
来源：物理研究所
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