High-quality ultralong Bi2S3 nanowires: Structure, growth, and properties
文献类型：期刊论文
| 作者 | Yu, Y ; Jin, CH ; Wang, RH ; Chen, Q ; Peng, LM |
| 刊名 | JOURNAL OF PHYSICAL CHEMISTRY B
 |
| 出版日期 | 2005 |
| 卷号 | 109期号:40页码:18772 |
| 关键词 | LARGE-SCALE SYNTHESIS FIELD-EMISSION BISMUTH TRANSISTORS NANOTUBES NANORODS SULFIDES SINGLE |
| ISSN号 | 1520-6106 |
| 通讯作者 | Peng, LM: Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China. |
| 中文摘要 | A simple one-step hydrothermal method for large-scale synthesis of ultralong single-crystalline Bi2S3 nanowires was reported, and the nanowires were comprehensively characterized. The diameters of the nanowires are about 60 nm, and their lengths range from tens of microns to several millimeters. The structure of the nanowires was determined to be of the orthorhombic phase, the growth direction was along [001], and the growth mechanism was investigated based on extensive high-resolution transmission electron microscopy observations. Optical absorption experiments revealed that the Bi2S3 nanowires are narrow-band semiconductors with a band gap E-g approximate to 1.33 eV. Electrical transport measurements on individual nanowires gave a resistivity of about 1.2 Omega cm and an emission current of 3.5 mu A at a bias field of 35 V/mu m. This current corresponds to a current density of about 10(5) A/cm(2), which makes the Bi2S3 nanowire a potential candidate for applications in field-emission electronic devices. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39417]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, Y,Jin, CH,Wang, RH,et al. High-quality ultralong Bi2S3 nanowires: Structure, growth, and properties[J]. JOURNAL OF PHYSICAL CHEMISTRY B,2005,109(40):18772. |
| APA | Yu, Y,Jin, CH,Wang, RH,Chen, Q,&Peng, LM.(2005).High-quality ultralong Bi2S3 nanowires: Structure, growth, and properties.JOURNAL OF PHYSICAL CHEMISTRY B,109(40),18772. |
| MLA | Yu, Y,et al."High-quality ultralong Bi2S3 nanowires: Structure, growth, and properties".JOURNAL OF PHYSICAL CHEMISTRY B 109.40(2005):18772. |
入库方式： OAI收割
来源：物理研究所
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