High-resolution electron microscopy of misfit dislocations in AlSb/GaAs (001) system
文献类型：期刊论文
| 作者 | Wen, C ; Li, FH ; Zou, J ; Chen, H |
| 刊名 | ACTA PHYSICA SINICA
 |
| 出版日期 | 2010 |
| 卷号 | 59期号:3页码:1928 |
| 关键词 | IMAGE DECONVOLUTION SIGE/SI HETEROSTRUCTURES LOMER DISLOCATION CORE STRUCTURE INTERFACE CONFIGURATION DISSOCIATION CRYSTALS LATTICE GROWTH |
| ISSN号 | 1000-3290 |
| 通讯作者 | Li, FH: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | The detailed core structures of misfit dislocations in the AlSb/GaAs (001) heterostructure system were studied by 200 kV LaB(6) filament high-resolution electron microscope. In combination with image deconvolution, the [110] images were transformed into the projected structure maps, and the image resolution was enhanced up to the information limit of the microscope. To distinguish Al and Sb atoms in the AlSb film, the image contrast change with the sample thickness was analyzed for the perfect region in deconvoluted image, and the positions of Al and Sb atoms in the dumbbells were determined based on the image contrast theory of the pseudo-weak-phase object approximation. Then the structure models of two types of misfit dislocations were constructed. As the simulated images are in good agreement with the experimental images, the AlAs type interface and the core structures of obtained Lomer and 60 degrees misfit dislocations were determined. |
| 收录类别 | SCI |
| 资助信息 | National Natural Science Foundation of China [50672124] |
| 语种 | 中文 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39424]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Wen, C,Li, FH,Zou, J,et al. High-resolution electron microscopy of misfit dislocations in AlSb/GaAs (001) system[J]. ACTA PHYSICA SINICA,2010,59(3):1928. |
| APA | Wen, C,Li, FH,Zou, J,&Chen, H.(2010).High-resolution electron microscopy of misfit dislocations in AlSb/GaAs (001) system.ACTA PHYSICA SINICA,59(3),1928. |
| MLA | Wen, C,et al."High-resolution electron microscopy of misfit dislocations in AlSb/GaAs (001) system".ACTA PHYSICA SINICA 59.3(2010):1928. |
入库方式： OAI收割
来源：物理研究所
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