中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3-delta/Si heterojunction

文献类型:期刊论文

作者Wen, JA ; Guo, HZ ; Xing, J ; Lu, HB ; Jin, KJ ; He, M ; Yang, GZ
刊名SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY
出版日期2010
卷号53期号:11页码:2080
关键词OXIDES
ISSN号1674-7348
通讯作者Lu, HB: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要A high sensitivity photovoltaic effect has been observed in a heterojunction composed of n-type wide bandgap oxide SrTiO3-delta and p-type Si fabricated by laser molecular beam epitaxy. The responsivity of open-circuit photovoltage can reach 10(4) V/W without any amplification under zero bias for the wavelength range from visible to near infrared light in nW-mu W order. We attribute the high performance of the photovoltage responsivity to the interfacial photoelectric effects in the SrTiO3-I '/Si heterojunction. From the experimental results, some ideas can be generalized to improve photovoltaic efficiency and develop high sensitivity photodetectors with wide bandgap oxide materials and Si.
收录类别SCI
资助信息National Basic Research Program of China [2007CB935700]; National Natural Science Foundation of China [50672120]
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/39441]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Wen, JA,Guo, HZ,Xing, J,et al. High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3-delta/Si heterojunction[J]. SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,2010,53(11):2080.
APA Wen, JA.,Guo, HZ.,Xing, J.,Lu, HB.,Jin, KJ.,...&Yang, GZ.(2010).High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3-delta/Si heterojunction.SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY,53(11),2080.
MLA Wen, JA,et al."High-sensitivity photovoltage based on the interfacial photoelectric effect in the SrTiO3-delta/Si heterojunction".SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY 53.11(2010):2080.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。