中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Hopping conduction in single ZnO nanowires

文献类型:期刊论文

作者Ma, YJ ; Zhang, Z ; Zhou, F ; Lu, L ; Jin, AZ ; Gu, CZ
刊名NANOTECHNOLOGY
出版日期2005
卷号16期号:6页码:746
关键词CHEMICAL-VAPOR-DEPOSITION COULOMB GAP ELECTRICAL-CONDUCTIVITY CARBON NANOTUBES PYROSOL PROCESS DOPED ZNO TRANSPORT TEMPERATURE SENSORS FILM
ISSN号0957-4484
通讯作者Ma, YJ: Chinese Acad Sci, Inst Phys, Lab Electron Microscopy, POB 603, Beijing 100080, Peoples R China.
中文摘要ZnO nanowires were synthesized by chemical vapour deposition (CVD). The dc electrical conductivity of a single ZnO nanowire was investigated over a wide temperature range from 300 to 6 K. It is found that the rho similar to T(-1/2) temperature dependence of conductivity follows the relation In p similar to T(-1/2). The conductivity data suggest that the dominant conduction mechanism is Efros-Shklovskii variable-range hopping conduction. The strong electron-electron interaction in the nanowire is also proved by the I-V and dI/dV curves, on which there emerges a Coulomb gap-like structure at low temperatures.
收录类别SCI
语种英语
公开日期2013-09-17
源URL[http://ir.iphy.ac.cn/handle/311004/39489]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Ma, YJ,Zhang, Z,Zhou, F,et al. Hopping conduction in single ZnO nanowires[J]. NANOTECHNOLOGY,2005,16(6):746.
APA Ma, YJ,Zhang, Z,Zhou, F,Lu, L,Jin, AZ,&Gu, CZ.(2005).Hopping conduction in single ZnO nanowires.NANOTECHNOLOGY,16(6),746.
MLA Ma, YJ,et al."Hopping conduction in single ZnO nanowires".NANOTECHNOLOGY 16.6(2005):746.

入库方式: OAI收割

来源:物理研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。