Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)
文献类型：期刊论文
| 作者 | Han, XF ; Lin, LY ; Miyazaki, T ; Yang, FM ; Xu, RG ; Wang, XH ; Pan, HG ; Chen, CP |
| 刊名 | JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
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| 出版日期 | 1999 |
| 卷号 | 15期号:1页码:5 |
| 关键词 | HARD MAGNETIC-PROPERTIES |
| ISSN号 | 1005-0302 |
| 通讯作者 | Han, XF: Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China. |
| 中文摘要 | A systematic study of the phase formation, structure and magnetic properties of the R3Fe29-xTx compounds (R=Y, Ce, Nd, Sm, Gd, Tb, and Dy; T=V and Cr) has been performed upon hydrogenation. The lattice constants and the unit cell volume of R3Fe29-xTxHy decrease with increasing R atomic number from Nd to Dy, except for Ce, reflecting the lanthanide contraction. Regular anisotropic expansions mainly along the a- and b-axis rather than along the c-axis are observed for all of the compounds upon hydrogenation. Hydrogenation leads to an increase in the Curie temperature and a corresponding increase in the saturation magnetization at room temperature for each compound. First order magnetization processes (FOMP) occur in the external magnetic fields for Nd3Fe24.5Cr4.5H5.0, Tb3Fe27.0Cr2.0H2.8, and Gd3Fe28.0Cr1.0H4.2 compounds. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39541]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Han, XF,Lin, LY,Miyazaki, T,et al. Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,1999,15(1):5. |
| APA | Han, XF.,Lin, LY.,Miyazaki, T.,Yang, FM.,Xu, RG.,...&Chen, CP.(1999).Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr).JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,15(1),5. |
| MLA | Han, XF,et al."Hydrogenation and anisotropic expansions in R3Fe29-xTx (R = Y, Ce, Nd, Sm, Gd, Tb and Dy; T = V and Cr)".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 15.1(1999):5. |
入库方式： OAI收割
来源：物理研究所
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