Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy
文献类型：期刊论文
| 作者 | He, XQ ; Wen, C ; Duan, XF ; Chen, H |
| 刊名 | MATERIALS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 65期号:3页码:456 |
| 关键词 | DEVICE APPLICATIONS STRAIN HETEROSTRUCTURES DISPLACEMENT DISLOCATIONS STRESS GROWTH HREM |
| ISSN号 | 0167-577X |
| 通讯作者 | Duan, XF: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100190, Peoples R China. |
| 中文摘要 | Geometric phase analysis (GPA) is applied to determining the strain fields in AlSb/GaAs hetero-epitaxial film from high-resolution electron microscopy (HREM) images. The misfit dislocations along the hetero-interface are shown to be predominantly 90 degrees Lomer dislocations. The epitaxial film is almost fully relaxed by a high density of misfit dislocations. The 90 degrees Lomer dislocations are assumed to be formed by either recombination of two 60 degrees mixed misfit dislocations through a glide and climb process or direct nucleation at the interface. The atomic steps (ASs) are visualized in the strain map, providing a new method for identifying the ASs at the interface. (C) 2010 Elsevier B.V. All rights reserved. |
| 收录类别 | SCI |
| 资助信息 | Ministry of Science and Technology of China [2007CB936301, 2010CB934200] |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39585]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | He, XQ,Wen, C,Duan, XF,et al. Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy[J]. MATERIALS LETTERS,2011,65(3):456. |
| APA | He, XQ,Wen, C,Duan, XF,&Chen, H.(2011).Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy.MATERIALS LETTERS,65(3),456. |
| MLA | He, XQ,et al."Identification of atomic steps at AlSb/GaAs hetero-epitaxial interface using geometric phase method by high-resolution electron microscopy".MATERIALS LETTERS 65.3(2011):456. |
入库方式： OAI收割
来源：物理研究所
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