Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy
文献类型：期刊论文
| 作者 | Xue, QK ; Xue, QZ ; Kuwano, S ; Sakurai, T ; Ohno, T ; Tsong, IST ; Qiu, XG ; Segawa, Y |
| 刊名 | THIN SOLID FILMS
 |
| 出版日期 | 2000 |
| 卷号 | 367期号:1-2页码:149 |
| 关键词 | ENERGY ELECTRON-DIFFRACTION 6H-SIC(0001) SURFACES ATOMIC-STRUCTURE GAN(0001) SURFACES LATTICE POLARITY 0001 SURFACES LASER-DIODES GROWTH RECONSTRUCTION MORPHOLOGY |
| ISSN号 | 0040-6090 |
| 通讯作者 | Xue, QK: Chinese Acad Sci, State Key Lab Surface Phys, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
| 中文摘要 | Using scanning tunneling microscopy (STM), reflection high-energy electron diffraction (RHEED) and first-principles total-energy calculations, we have investigated the surface reconstructions that occurred on the basal planes of wurtzite GaN. Depending on the substrate used, two distinct classes of reconstructions, which correspond to the different surface polarities of the hexagonal GaN, have been established, The Ga-polar surface forms on the Si-terminated 6H-SiC and displays the 10 x 10, 5 root 3 x 2 root 13, '5 x 2.5', 4 x 4, root 7 x root 7, 2 x 2 and 1 x 1. On the (000 (1) over bar) N-polar face grown on the C-terminated 6H-SiC substrate, three phases of 2 root 7 x 2 root 7, 6 x 6 and 2 x 4 are identified. irrespective of surface polarity, all these phases are found to be Ga-rich. We will show that their structure is consistent with a simple Ga-adatom-based scheme. We will further show that the: well-known electron counting model and structural motifs for the conventional III-V semiconductor reconstructed surfaces are insufficient to explain surface stability, and additional electron collective effects have to be considered in the case of GaN, (C) 2000 Elsevier Science S.A. All rights reserved. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39623]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Xue, QK,Xue, QZ,Kuwano, S,et al. Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy[J]. THIN SOLID FILMS,2000,367(1-2):149. |
| APA | Xue, QK.,Xue, QZ.,Kuwano, S.,Sakurai, T.,Ohno, T.,...&Segawa, Y.(2000).Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy.THIN SOLID FILMS,367(1-2),149. |
| MLA | Xue, QK,et al."Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy".THIN SOLID FILMS 367.1-2(2000):149. |
入库方式： OAI收割
来源：物理研究所
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