Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films
文献类型：期刊论文
| 作者 | Hu, ZH ; Liao, XB ; Diao, HW ; Kong, GL ; Zeng, XB ; Xu, YY |
| 刊名 | SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE
 |
| 出版日期 | 2004 |
| 卷号 | 47期号:3页码:327 |
| 关键词 | SILANE-METHANE PLASMA AMORPHOUS-SILICON CARBIDE |
| ISSN号 | 1006-9321 |
| 通讯作者 | Hu, ZH: Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China. |
| 中文摘要 | Hydrogenated amorphous silicon-carbon (a-SiC:H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) with a fixed methane to silane ratio ([CH4]/[SiH4]) of 1.2 and a wide range of hydrogen dilution (R-H=[H-2]/[SiH4 + CH4]) values of 12, 22, 33, 102 and 135. The impacts of RH on the structural and optical properties of the films were investigated by using UV-VIS transmission, Fourier transform infrared (FTIR) absorption, Raman scattering and photoluminescence (PL) measurements. The effects of high temperature annealing on the films were also probed. It is found that with increasing hydrogen dilution, the optical band gap increases, and the PL peak blueshifts from similar to1.43 to 1.62 eV. In annealed state, the room temperature PL peak for the low R-H samples disappears, while the PL peak for the high R-H samples appears at similar to 2.08 eV, which is attributed to nanocrystalline Si particles confined by Si-C and Si-O bonds. |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39633]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Hu, ZH,Liao, XB,Diao, HW,et al. Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films[J]. SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,2004,47(3):327. |
| APA | Hu, ZH,Liao, XB,Diao, HW,Kong, GL,Zeng, XB,&Xu, YY.(2004).Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films.SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE,47(3),327. |
| MLA | Hu, ZH,et al."Impacts of hydrogen dilution on growth and optical properties of a-SiC : H films".SCIENCE IN CHINA SERIES E-ENGINEERING & MATERIALS SCIENCE 47.3(2004):327. |
入库方式： OAI收割
来源：物理研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。