Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles
文献类型：期刊论文
| 作者 | Shi, L ; Shang, DS ; Chen, YS ; Wang, J ; Sun, JR ; Shen, BG |
| 刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS
 |
| 出版日期 | 2011 |
| 卷号 | 44期号:45 |
| 关键词 | MEMORY FILMS |
| ISSN号 | 0022-3727 |
| 通讯作者 | Shi, L: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | ZnO is especially attractive among the materials showing resistance switching because of its excellent properties such as light emitting and transparency for visible light. Unfortunately, the resistance switching in a ZnO-based device is usually unstable. By dispersing Ag particles of size similar to 20 nm at the electrode-ZnO interface, we significantly improved the resistance uniformity, set/reset repeatability of Ag-ZnO-Pt devices. Conducting atomic force microscope analysis revealed the appearance of micro-regions where resistance switching, with an improved stability, is more easily triggered. It is suggested that Ag particles act as seeds for conducting filaments, leading to depressed randomness and reduced diameter of the conducting paths. |
| 收录类别 | SCI |
| 资助信息 | National Basic Research of China; National Natural Science Foundation of China; Chinese Academy of Science; Beijing Municipal Nature Science Foundation |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39658]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Shi, L,Shang, DS,Chen, YS,et al. Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(45). |
| APA | Shi, L,Shang, DS,Chen, YS,Wang, J,Sun, JR,&Shen, BG.(2011).Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(45). |
| MLA | Shi, L,et al."Improved resistance switching in ZnO-based devices decorated with Ag nanoparticles".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.45(2011). |
入库方式： OAI收割
来源：物理研究所
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