Improved tunneling magnetoresistance in (Ga,Mn)As/AlOx/CoFeB magnetic tunnel junctions
文献类型：期刊论文
| 作者 | Yu, GQ ; Chen, L ; Rizwan, S ; Zhao, JH ; Xu, K ; Han, XF |
| 刊名 | APPLIED PHYSICS LETTERS
 |
| 出版日期 | 2011 |
| 卷号 | 98期号:26 |
| 关键词 | TEMPERATURE GA1-XMNXAS TRANSPORT EPILAYERS (GA FILMS MN)AS |
| ISSN号 | 0003-6951 |
| 通讯作者 | Han, XF: Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
| 中文摘要 | We fabricated (Ga,Mn)As/AlOx/Co40Fe40B20 magnetic tunnel junctions with ferromagnetic semiconductor/insulator/ferromagnetic metal (S/I/F) structure. The treatments of pre-annealing and post-plasma cleaning on the (Ga,Mn) As film were introduced before the growth of the subsequent layers. A high tunneling magnetoresistance (TMR) ratio of 101% is achieved at 2 K, and the spin polarization of (Ga,Mn) As, P = 56.8%, is deduced from Julliere's formula. The improved TMR ratio is primarily due to the improved magnetism of (Ga,Mn) As layer by low-temperature annealing and cleaned interface between (Ga,Mn) As and AlOx attained by subsequent plasma cleaning process. (C) 2011 American Institute of Physics. [doi:10.1063/1.3603946] |
| 收录类别 | SCI |
| 资助信息 | Fundamental Research of Ministry of Science and Technology [MOST] [2010CB934400]; National Natural Science Foundation of China [NSFC] [10934099, 10874225, 51021061]; K. C. Wong Education Foundation, Hong Kong |
| 语种 | 英语 |
| 公开日期 | 2013-09-17 |
| 源URL | [http://ir.iphy.ac.cn/handle/311004/39660]  |
| 专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
| 推荐引用方式 GB/T 7714 | Yu, GQ,Chen, L,Rizwan, S,et al. Improved tunneling magnetoresistance in (Ga,Mn)As/AlOx/CoFeB magnetic tunnel junctions[J]. APPLIED PHYSICS LETTERS,2011,98(26). |
| APA | Yu, GQ,Chen, L,Rizwan, S,Zhao, JH,Xu, K,&Han, XF.(2011).Improved tunneling magnetoresistance in (Ga,Mn)As/AlOx/CoFeB magnetic tunnel junctions.APPLIED PHYSICS LETTERS,98(26). |
| MLA | Yu, GQ,et al."Improved tunneling magnetoresistance in (Ga,Mn)As/AlOx/CoFeB magnetic tunnel junctions".APPLIED PHYSICS LETTERS 98.26(2011). |
入库方式： OAI收割
来源：物理研究所
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